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 BC640, BC640-16 High Current Transistors
PNP Silicon
Features
* Pb-Free Packages are Available*
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COLLECTOR 2
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value -80 -80 -5.0 -0.5 625 5.0 1.5 12 -55 to +150 Unit Vdc Vdc Vdc Adc mW mW/C W mW/C C TO-92 CASE 29 STYLE 14 12 1 3 BASE 1 EMITTER
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
3 STRAIGHT LEAD BULK PACK
3 BENT LEAD TAPE & REEL AMMO PACK
2
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
BC 640 AYWW G G
BC64 0-16 AYWW G G
A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2007
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
1
March, 2007 - Rev. 0
Publication Order Number: BC640/D
BC640, BC640-16
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -100 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Collector Cutoff Current (VCB = -30 Vdc, IE = 0) (VCB = -30 Vdc, IE = 0, TA = 125C) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = -5.0 mAdc, VCE = -2.0 Vdc) (IC = -150 mAdc, VCE = -2.0 Vdc) (IC = -500 mA, VCE = -2.0 V) Collector - Emitter Saturation Voltage (IC = -500 mAdc, IB = -50 mAdc) Base - Emitter On Voltage (IC = -500 mAdc, VCE = -2.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (IC = -50 mAdc, VCE = -2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. fT - Cob - Cib - 110 - 9.0 - pF 150 - pF MHz VCE(sat) VBE(on) - - -1.0 hFE BC640 BC640-16 25 40 100 25 - - - - - - -0.25 -0.5 - 160 250 - -0.5 - Vdc Vdc - V(BR)CEO -80 V(BR)CBO -80 V(BR)EBO ICBO - - - - -100 -10 nAdc mAdc -5.0 - - - - Vdc - - Vdc Vdc Symbol Min Typ Max Unit
ORDERING INFORMATION
Device BC640G BC640ZL1G BC640-16 BC640-16G Package TO-92 (Pb-Free) TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) Shipping 5000 Units / Bulk 2000 Units / Ammo Box 5000 Units / Bulk 5000 Units / Bulk
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2
BC640, BC640-16
-1000 -500 IC, COLLECTOR CURRENT (mA) -200 -100 -50 -20 -10 -5 -2 -1 -1 PD TA 25C PD TC 25C BC636 BC638 BC640 PD TA 25C PD TC 25C SOA = 1S hFE, DC CURRENT GAIN 200 -A 100 -L 500 VCE = -2 V -B
50
-2 -3 -4 -5 -7 -10 -20 -30-40 -50 -70 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
20
-1
-3
-5
-10 -30 -50 -100 IC, COLLECTOR CURRENT (mA)
-300 -500 -1000
Figure 1. Active Region Safe Operating Area
BANDWIDTH PRODUCT (MHz)
Figure 2. DC Current Gain
500 300 V, VOLTAGE (VOLTS)
-1 -0.8 -0.6 -0.4 -0.2 VCE(sat) @ IC/IB = 10
VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -2 V
100
VCE = -2 V
f T, CURRENT-GAIN
50
20 -1
-10 -100 IC, COLLECTOR CURRENT (mA)
-1000
0
-1
-10 -100 IC, COLLECTOR CURRENT (mA)
-1000
Figure 3. Current Gain Bandwidth Product
Figure 4. "Saturation" and "On" Voltages
V, TEMPERATURE COEFFICIENTS (mV/C)
-0.2
-1.0 VCE = -2 VOLTS DT = 0C to +100C qV for VBE
-1.6
-2.2
-1
-3
-5
-10 -30 -50 -100 IC, COLLECTOR CURRENT (mA)
-300 -500 -1000
Figure 5. Temperature Coefficients
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3
BC640, BC640-16
PACKAGE DIMENSIONS
TO-92 (TO-226) CASE 29-11 ISSUE AM
A R P L
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 ---
B
STRAIGHT LEAD BULK PACK
K
XX G H V
1
D J C SECTION X-X N N
R
A
B
BENT LEAD TAPE & REEL AMMO PACK
P T
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --- 2.04 2.66 1.50 4.00 2.93 --- 3.43 --- STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE
K
XX G
D J V C SECTION X-X N
1
DIM A B C D G J K N P R V
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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4
BC640/D


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